Localized states in semiconductors: isocoric impurities in Si and Ge
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/10/i=14/a=014/pdf
Reference28 articles.
1. Optical Determination of the Symmetry of the Ground States of Group-V Donors in Silicon
2. Effect of Spin-Orbit Coupling and Other Relativistic Corrections on Donor States in Ge and Si
3. Valley-Orbit Interaction in Semiconductors
4. Spherical Model of Shallow Acceptor States in Semiconductors
5. Electronic impurity levels in semiconductors
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1. Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory;Journal of Physics: Condensed Matter;2015-03-18
2. Scattering of electrons by ionized impurities in semiconductors: quantum-mechanical approach to third body exclusion;Journal of Computational Electronics;2013-11-27
3. Theory ofD−states in Ge and Si;Physical Review B;1982-03-15
4. Model Hamiltonian of donors in indirect-gap materials;Physical Review B;1981-04-15
5. Polarizabilities of Donors in Elemental Semiconductors (II);physica status solidi (b);1980-07-01
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