A genuine neutral double acceptor in a II-VI semiconductor-SiTe(?) in ZnTe-Reference-Cited by-同舟云学术

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A genuine neutral double acceptor in a II-VI semiconductor-SiTe(?) in ZnTe

Published:1985-11-30 Issue:33 Volume:18 Page:6185-6198
ISSN:0022-3719
Container-title:Journal of Physics C: Solid State Physics
language:
Short-container-title:J. Phys. C: Solid State Phys.

Author:

Dean P J,Kane M J,Magnea N,Maigret F de,Dang Le Si,Nahmani A,Romestain R,Skolnick M S

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering,Condensed Matter Physics

Link

http://stacks.iop.org/0022-3719/18/i=33/a=009/pdf

Reference29 articles.

1. Advances in injection luminescence of II–VI compounds

2. Cyclotron resonance from photoexcited electrons in ZnTe

3. Resonant donor-bound-exciton luminescence in semiconductors

4. The nature of the predominant acceptors in high quality zinc telluride

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Changes in the photoluminescence spectrum near twin boundaries in ZnTe crystals produced by rapid crystallization;Physics of the Solid State;2008-05

2. Morphology, twinning, and photoluminescence of ZnTe crystals grown by chemical synthesis from vapor-phase components;Semiconductors;2006-02

3. Microphotoluminescence of Undoped Single-Crystal Zinc Telluride Produced by Nonequilibrium Vapor-Phase Growth Techniques;Semiconductors;2005

4. Photoluminescence of ZnTe Crystals Grown under Deviation from Thermodynamic Equilibrium;Physics of the Solid State;2005

5. Photocurrent Transients in Presence of a Double Impurity in Semi-Insulating Semiconductors;physica status solidi (a);2000-04

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