Variable-range hopping in compensated epitactic n-InP
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/18/i=31/a=006/pdf
Reference11 articles.
1. Electrical conduction in heavily doped germanium
2. Variable-range-hopping conductivity in compensatedn-type GaAs
3. Coulomb gap in disordered systems
4. Coulomb gap and low temperature conductivity of disordered systems
Cited by 19 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Positive magnetoresistance in the variable-range-hopping regime in copper indium diselenide on either side of the critical fieldBc;Physical Review B;1995-09-15
2. On the negative magnetoresistance in the variable range hopping regime in n-type CuInSe2;Physica Status Solidi (a);1994-07-16
3. Coulomb gap measurement in non-compensated Si:As;Journal of Physics: Condensed Matter;1993-01-11
4. Hopping conduction in copper indium diselenide;Philosophical Magazine B;1992-04
5. Hopping Conduction in the Critical Regime Approaching the Metal–Insulator Transition;Modern Problems in Condensed Matter Sciences;1991
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