Photoionisation of impurities with deep levels in gallium arsenide
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/13/i=9/a=027/pdf
Reference12 articles.
1. Photoionisation of deep impurity levels in semiconductors
2. A study of emission from the (1,1,1) faces of GaAs negative electron affinity photoemitters
3. Band Structures and Pseudopotential Form Factors for Fourteen Semiconductors of the Diamond and Zinc-blende Structures
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