Correlation and electron-phonon effects in the (111)-silicon dangling-bond surface states
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/19/i=4/a=014/pdf
Reference23 articles.
1. Structure Analysis of the Si(111)7 × 7 Surface by Low-Energy Ion Scattering
2. Evidence for a 2D-metallic state of the clean 7 × 7 Si(111) surface
3. 7 × 7 Reconstruction on Si(111) Resolved in Real Space
4. Electron-phonon coupling and surface-state polarons on Si(111)2×1
5. Temperature-Dependent Surface States and Transitions of Si(111)-7×7
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1. Electron correlation and many-body effects at interfaces on semiconducting substrates;physica status solidi (a);2012-02-09
2. Novel Bi-Polaronic Ground State in K/Si(111):B;e-Journal of Surface Science and Nanotechnology;2009
3. Electron-Phonon Interaction at theSi(111)−7×7Surface;Physical Review Letters;2006-05-31
4. Mott Insulating Ground State on a Triangular Surface Lattice;Physical Review Letters;1997-02-17
5. Temperature-dependent angle-resolved photoemission study of the linewidth of surface states of III-V semiconductors;Physical Review B;1991-01-15
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