Excitation density dependence of the luminescence from bound multi-exciton complexes in phosphorus doped silicon
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/11/i=13/a=011/pdf
Reference10 articles.
1. Absorption due to the creation of bound excitons in phosphorus-doped silicon
2. A new model for bound multiexciton complexes
3. A shell model of bound multiexciton complexes in silicon
4. New photoluminescence line-series spectra attributed to decay of multiexciton complexes bound to Li, B, and P centers in Si
5. Luminescence associated with transitions from an excited state of the bound excitons in P, As, Sb and Bi doped Si
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Photoluminescence spectroscopy of crystalline semiconductors;Materials Science and Engineering: R: Reports;1997-03
2. The optical properties of luminescence centres in silicon;Physics Reports;1989-05
3. Luminescence study of thallium implanted silicon;Journal of Applied Physics;1983-11
4. Bound exciton recombination in beryllium-doped silicon;Journal of Physics C: Solid State Physics;1981-04-10
5. Uniaxial stress analysis of bound-exciton excited states in lithium-doped silicon;Journal of Physics C: Solid State Physics;1980-04-20
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