Dose-dependency and recovery behaviour of transport properties of electron irradiated tellurium
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/11/i=13/a=018/pdf
Reference17 articles.
1. Estimation of the Critical Temperature of Electron-Hole Droplets in Ge and Si
2. The Hole Mobility in a-Edge-Dislocated Tellurium Crystals
3. Analysis of Point Defect States in Copper I. The Influence of the Point Defect State on the Irradiation Damage Rate at 80 °K
4. Low-temperature dislocation substructure in the early stage of deformation of tellurium single crystals
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Optical properties of neutron-irradiation-induced defects in single-crystal tellurium near the fundamental energy gap;Philosophical Magazine B;1984-05
2. Recovery behavior of tellurium irradiated with 20-MeV electrons and the influence of lattice defects on the transport properties;Physical Review B;1981-08-15
3. The high magnetic field facility at Würzburg;Journal of Magnetism and Magnetic Materials;1979-04
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