Fabrication of a silicon nanostructure-based light emitting device

Abstract

Abstract Silicon nanostructure-based light emitting devices (nc_SiLED) have been fabricated using conventional microelectronic technologies. The emissive layer composed of silicon and silicon dioxide was deposited by magnetron co-sputtering. Under forward bias, a broad electroluminescence (PL) spectrum in the range 450–900 nm was observed, peaking at around 705 nm. The effect of Si content in the active layer on the electrical and optical properties of these devices was measured and discussed.