Mixed Mott–Hubbard and charge transfer nature of 4H–SrMnO3 thin film on Si (100)

Abstract

Abstract Room temperature electronic structure of polycrystalline 4H–SrMnO3 thin film grown on Si (100) substrate has been studied using resonance photo emission spectroscopy and soft x-ray absorption spectroscopy measurements. Presence of charge transfer screen Mn 3d n L final state along with the 3d n-1 final state at the valence band edge of 4H–SrMnO3 thin film confirms that the ground state is strongly mixed between Mn 3d and O 2p states. The estimated equivalent values of on-site Coulomb interaction energy (U) and O 2p to Mn 3d- charge transfer energy (Δ) (U ≈ Δ ≈ 4.8 eV) from the combination of occupied and unoccupied spectra further confirm the intermediate Mott–Hubbard and charge transfer insulator nature of 4H–SrMnO3 film. Despite having similar Mn 4+ valence state in 4H–SrMnO3 and cubic SrMnO3, 4H phase is observed to reveal much higher band gap ∼1.5 eV than the cubic phase (0.3 eV), which arises due to different MnO6 octahedra environment.