Abstract
Abstract
Room temperature electronic structure of polycrystalline 4H–SrMnO3 thin film grown on Si (100) substrate has been studied using resonance photo emission spectroscopy and soft x-ray absorption spectroscopy measurements. Presence of charge transfer screen Mn 3d
n
L
final state along with the 3d
n-1 final state at the valence band edge of 4H–SrMnO3 thin film confirms that the ground state is strongly mixed between Mn 3d and O 2p states. The estimated equivalent values of on-site Coulomb interaction energy (U) and O 2p to Mn 3d- charge transfer energy (Δ) (U ≈ Δ ≈ 4.8 eV) from the combination of occupied and unoccupied spectra further confirm the intermediate Mott–Hubbard and charge transfer insulator nature of 4H–SrMnO3 film. Despite having similar Mn 4+ valence state in 4H–SrMnO3 and cubic SrMnO3, 4H phase is observed to reveal much higher band gap ∼1.5 eV than the cubic phase (0.3 eV), which arises due to different MnO6 octahedra environment.
Subject
Condensed Matter Physics,General Materials Science
Cited by
2 articles.
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