Al-alkyls as acceptor dopant precursors for atomic-scale devices-Reference-Cited by-同舟云学术

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Al-alkyls as acceptor dopant precursors for atomic-scale devices

Published:2021-09-01 Issue:46 Volume:33 Page:464001
ISSN:0953-8984
Container-title:Journal of Physics: Condensed Matter
language:
Short-container-title:J. Phys.: Condens. Matter

Author:

Owen J H G^ORCID,Campbell Q^ORCID,Santini R,Ivie J A,Baczewski A D,Schmucker S W,Bussmann E,Misra S,Randall J N

Funder

U.S. Department of Energy

United States Government

Laboratory Directed Research and Development

Sandia National Laboratories

Office of Science

LLC

National Nuclear Security Administration

Honeywell

Publisher

IOP Publishing

Subject

Condensed Matter Physics,General Materials Science

Link

https://iopscience.iop.org/article/10.1088/1361-648X/ac1ddf/pdf

Reference40 articles.

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2. A single-atom transistor;Fuechsle;Nat. Nanotechnol.,2012

3. A two-qubit gate between phosphorus donor electrons in silicon;He;Nature,2019

4. Atomic-scale control of tunneling in donor-based devices;Wang;Commun. Phys.,2020

5. Quantum engineering at the silicon surface using dangling bonds;Schofield;Nat. Commun.,2013

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4. Hole in one: Pathways to deterministic single-acceptor incorporation in Si(100)-2 × 1;AVS Quantum Science;2022-03

5. Impact of Incorporation Kinetics on Device Fabrication with Atomic Precision;Physical Review Applied;2021-11-18

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