Charge filling induced quasi-two dimensional charge/spin density wave channel in a ballistic transport device

Author:

Saumya BiswasORCID

Abstract

Abstract Charge filling controlled mean field metal–insulator phase transition is examined in the context of two dimensional Fermi surface nesting and van Hove singularity induced charge density wave (CDW), spin density wave (SDW) condensates. In the framework of a coherent ballistic transport model utilizing the Non-Equilibrium Green Function approach (NEGF), a three terminal device with metallic gate, source, drain and CDW/SDW channel is simulated and studied. Within the validity of mean field approximation, we exposit the commensurability and boundary effects. The efficacy of the Hubbard model for (quasi) two dimensional Charge and Spin Density Wave materials is discussed. A two orbital generalization of the effective Hamiltonian is proposed for transport calculations in rare earth Tellurides RTe 3.

Funder

Semiconductor Research Corporation

National Science Foundation

Nanoelectronic Research Initiative

NSF

Publisher

IOP Publishing

Subject

Condensed Matter Physics,General Materials Science

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