Electron heating induced by an ac-bias current in the regime of Shubnikov–de Haas oscillation in the high mobility GaAs/Al x Ga1−x As two-dimensional electron system-Reference-Cited by-同舟云学术

Electron heating induced by an ac-bias current in the regime of Shubnikov–de Haas oscillation in the high mobility GaAs/Al x Ga1−x As two-dimensional electron system

Published:2018-07-10 Issue:31 Volume:30 Page:315701
ISSN:0953-8984
Container-title:Journal of Physics: Condensed Matter
language:
Short-container-title:J. Phys.: Condens. Matter

Author:

Munasinghe C Rasadi^ORCID,Gunawardana B,Samaraweera R L,Wang Z,Nanayakkara T R,Kriisa A,Reichl C,Wegscheider W,Mani R G

Funder

Army Research Office

Basic Energy Sciences

National Science Foundation

Publisher

IOP Publishing

Subject

Condensed Matter Physics,General Materials Science

Link

http://iopscience.iop.org/article/10.1088/1361-648X/aace34/pdf

Reference98 articles.

1. Zero-resistance states induced by electromagnetic-wave excitation in GaAs/AlGaAs heterostructures

2. Demonstration of a1/4-Cycle Phase Shift in the Radiation-Induced Oscillatory Magnetoresistance inGaAs/AlGaAsDevices

3. Radiation-induced oscillatory magnetoresistance as a sensitive probe of the zero-field spin-splitting in high-mobilityGaAs/AlxGa1−xAsdevices

4. Evidence for a New Dissipationless Effect in 2D Electronic Transport

5. Radiation-induced zero-resistance states inGaAs∕AlGaAsheterostructures: Voltage-current characteristics and intensity dependence at the resistance minima

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