Intrinsic negative Poisson’s ratio of the monolayer semiconductor β- TeO2

Abstract

Abstract Monolayer semiconductors with unique mechanical responses are promising candidates for novel electromechanical applications. Here, through first-principles calculations, we discover that the monolayer β- TeO 2 , a high-mobility p-type and environmentally stable 2D semiconductor, exhibits an unusual out-of-plane negative Poisson’s ratio (NPR) when a uniaxial strain is applied along the zigzag direction. The NPR originates from the unique six-sublayer puckered structure and hinge-like Te–O bonds in the 2D β- TeO 2 . We further propose that the sign of the Raman frequency change under uniaxial tensile strain could assist in determining the lattice orientation of monolayer β- TeO 2 , which facilitates the experimental study of the NPR. Our results is expected to motivate further experimental and theoretical studies of the rich physical and mechanical properties of monolayer β-TeO2.