Quasiparticle self-consistent GW electronic band structures of Be-IV-N2 compounds
Author:
Funder
Division of Materials Research
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://iopscience.iop.org/article/10.1088/1361-648X/ab1fc5/pdf
Reference32 articles.
1. Heterovalent ternary II-IV-N2 compounds: perspectives for a new class of wide-band-gap nitrides
2. Synthesis, structure, and optoelectronic properties of II–IV–V2materials
3. Band Gaps, Band‐Offsets, Disorder, Stability Region, and Point Defects in II‐IV‐N 2 Semiconductors
4. Zur Kenntnis des Systems Be3N2?Si3N4. III. Darstellung und Eigenschaften von BeSiN2
5. Zur Kenntnis des Systems Be3N2 ? Si3N4, IV. Die Kristallstruktur von BeSiN2
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Synthesis and Comprehensive Studies of Be‐IV‐N2 (IV=Si, Ge): Solving the Mystery of Wurtzite‐Type Pmc21 Structures;Angewandte Chemie;2024-09-03
2. Synthesis and Comprehensive Studies of Be‐IV‐N2 (IV=Si, Ge): Solving the Mystery of Wurtzite‐Type Pmc21 Structures;Angewandte Chemie International Edition;2024-09-02
3. Absolute deformation potentials and absolute energy levels of III-N, ZnO, and II-IV-N2 semiconductors for optoelectronic applications;Journal of Physics D: Applied Physics;2024-01-18
4. Cation-size mismatch as a predictive descriptor for structural distortion, configurational disorder, and valence-band splitting in II-IV-N2 semiconductors;Applied Physics Letters;2021-09-27
5. Stability, electronic structures, and band alignment of two-dimensional IIA -IV- N2 materials;Physical Review Materials;2020-08-25
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