Isotope doping-induced crossover shift in the thermal conductivity of thin silicon nanowires

Abstract

Abstract Here, using homogeneous nonequilibrium molecular dynamics simulations, we report the thermal transport characteristics of thin Si nanowires (NWs) with varying size and isotope doping ratio. It is identified that crossover in the thermal conductivity (κ) of both isotope doping-free and isotope doped Si-NWs appears at critical sizes, below which κ is enlarged with decreasing size because the hydrodynamic phonon flow predominates, above which, due to the dominant phonon boundary scattering, opposite behavior is observed. With increasing isotope doping, however, the critical size in minimizing the κ is moved to small values because the phonon impurity scattering caused by isotope doping is critically involved. Moreover, there is a critical isotope doping (<50%) in the critical size motion, originating from that, above which, the critical size no longer moves due to the persistence of hydrodynamic phonon flow. This study provides new insights into the thermal transport behaviors of quasi-1D structures.