Dopant activation mechanism of Bi wire-δ-doping into Si crystal, investigated with wavelength dispersive fluorescence x-ray absorption fine structure and density functional theory-Reference-Cited by-同舟云学术

Dopant activation mechanism of Bi wire-δ-doping into Si crystal, investigated with wavelength dispersive fluorescence x-ray absorption fine structure and density functional theory

Published:2017-03-15 Issue:15 Volume:29 Page:155001
ISSN:0953-8984
Container-title:Journal of Physics: Condensed Matter
language:
Short-container-title:J. Phys.: Condens. Matter

Author:

Murata Koichi,Kirkham Christopher,Shimomura Masaru,Nitta Kiyofumi,Uruga Tomoya,Terada Yasuko,Nittoh Koh-ichi,Bowler David R,Miki Kazushi

Funder

Japan Society for the Promotion of Science

Publisher

IOP Publishing

Subject

Condensed Matter Physics,General Materials Science

Link

http://stacks.iop.org/0953-8984/29/i=15/a=155001/pdf

Reference36 articles.

1. Optically driven silicon-based quantum gates with potential for high-temperature operation

2. The initialization and manipulation of quantum information stored in silicon by bismuth dopants

3. Solid-state quantum memory using the 31P nuclear spin

4. Electron Spin Coherence and Electron Nuclear Double Resonance of Bi Donors in Natural Si

5. Solid Solubilities of Impurity Elements in Germanium and Silicon*

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1. Activation of two dopants, Bi and Er in δ-doped layer in Si crystal;Nano Futures;2021-12-01

2. Development of Surface Fluorescence X‐Ray Absorption Fine Structure Spectroscopy Using a Laue‐Type Monochromator;The Chemical Record;2018-08-08

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