The coexistence of ferroelectricity and topological phase transition in monolayer α-In2Se3 under strain engineering
Author:
Funder
National Natural Science Foundation of China
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
https://iopscience.iop.org/article/10.1088/1361-648X/ab58f1/pdf
Reference51 articles.
1. Class of Rashba ferroelectrics in hexagonal semiconductors
2. Strain-Induced Ferroelectric Topological Insulator
3. Antiferroelectric Topological Insulators in Orthorhombic AMgBi Compounds ( A=Li , Na, K)
4. Electrically controlled dc and ac transport in bilayer WSe2
5. Ferroelectric dead layer driven by a polar interface
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