On the mobility of photoexcited carriers in silicon at low temperatures
Author:
Publisher
IOP Publishing
Subject
General Earth and Planetary Sciences,General Environmental Science
Link
http://stacks.iop.org/0370-1328/85/i=1/a=320/pdf
Reference10 articles.
1. Theory of the Electrical Properties of Germanium and Silicon
2. Neutral Impurity Scattering in Semiconductors
3. Shallow Impurity Traps and Electron Transfer Dynamics inn-Type Silicon at Liquid Helium Temperatures
4. Giant traps
5. Low temperature electron trapping lifetimes and extrinsic photoconductivity in n-type silicon doped with shallow impurities
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Nonlinear optical effects of ultrahigh-Q silicon photonic nanocavities immersed in superfluid helium;Scientific Reports;2013-03-13
2. Criterion for multi-ion scattering in free carrier transport;Journal of Physics C: Solid State Physics;1982-03-30
3. Phase-shift calculation of electron mobility inn-type silicon at low temperatures;Physical Review B;1981-08-15
4. A theory of the transport and recombination properties of photoexcited carriers in germanium and silicon at low temperatures;Journal of Physics C: Solid State Physics;1973-10-30
5. On the Problem of Electron Capture Coefficients of the Group III Acceptors in Silicon;physica status solidi (b);1969
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