Hall Mobility and Magnetoresistance of Semiconductors due to Hot Carriers in High Magnetic Fields-Reference-Cited by-同舟云学术

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Hall Mobility and Magnetoresistance of Semiconductors due to Hot Carriers in High Magnetic Fields

Published:1963-04 Issue:4 Volume:81 Page:736-740
ISSN:0370-1328
Container-title:Proceedings of the Physical Society
language:
Short-container-title:Proc. Phys. Soc.

Author:

Nag B R,Das P,Paria H

Publisher

IOP Publishing

Subject

General Earth and Planetary Sciences,General Environmental Science

Link

http://stacks.iop.org/0370-1328/81/i=4/a=315/pdf

Reference4 articles.

1. Hot Electrons in Germanium and Ohm's Law

2. Variation of Hall Mobility of Carriers in Nondegenerate Semiconductors with Electric Field

3. On the Conductivity of Non-polar Crystals in the Strong Electric Field, I

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hot-Carrier Galvanomagnetic Effects in High Magnetic Fields;physica status solidi (b);1982-08-01

2. Galvanomagnetic effects of hot electrons in n-type silicon;Journal of Physics and Chemistry of Solids;1970-05

3. Hot-carrier d.c. conduction in elemental semiconductors;Solid-State Electronics;1967-05

4. Hot-Carrier Magnetoresistance;Physical Review;1966-10-14

5. Transport Phenomena in InSb at High Electric and High Magnetic Fields;Journal of the Physical Society of Japan;1966-07

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