Theoretical Study and Evaluation of Charge Transfer Rate At Zn Metal Contact with SnO 2 Semiconductor Devices

Abstract

Abstract In this paper, the tin oxide SnO2 has been used in Zn/SnO2 junction devices structure to investigate the electric characteristic and charge transfer rate stability. The Zn/SnO2 Hetrojunction structures have been utilized to investigated the charge transfer rate using the quantum transition theory. The charge transfer rate properties of Zn/SnO2 devices with the orientation energy of configuration has been studied by quantum analysis of electronic transfer between donor and acceptor materials with MATLAP simulation program. It has been estimated and investigated using the work function of Zn metal and electronic affinity of SnO2 adding interface junction, which consists of higher doped SnO2 with the variation of energy absorption parameters of Zn metal, it influenced the electric properties of Zn/SnO2 devices due to limited transfer of charge. The orientation energy is effected with dielectric and refractive indices for metal and semiconductor. The orientation energy effected on the electric properties behavior in Zn/SnO2 devices due to results of charge rate. The charge transfer rate is increased with increased the overlapping strength coupling and reach to maximum at coupling 1.60 for all energy of system. From the calculation result of charge transfer rate, the rate is best at 2.119eV and has been achieved for Z/SnO2 devices with orientation energy 0.06267eV.