Author:
Wang Jiajun,Wu Fengzhi,Wu Jianxing,Cai Chouai,Liu Wenyi
Abstract
Abstract
Aiming at the problem of the short service life of the carbon/carbon pot wall caused by continuous silicification during the pulling process of single crystal silicon, the paper analyzes the failure mode of the carbon/carbon pot wall and analyzes the influence of the pot wall in the single crystal silicon furnace thermal field. The mechanism of erosion damage. It is concluded from the use situation that the carbon/carbon composite crucible can be used in the field of Czochralski single crystal silicon, and its performance is far better than that of the graphite crucible, and the destruction mechanism of the carbon/carbon composite crucible is analyzed, and solutions are proposed. Through the analysis of the entire industry, carbon/carbon composite crucibles will replace graphite crucibles and become the preferred material for the thermal field of Czochralski silicon single crystals in the future.
Cited by
1 articles.
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