Highly sensitive photodetectors on the basis of Au-oxide-n-GaP0.4As0.6

Abstract

Abstract This paper presents the results of studies of the photoelectric properties of Au-oxide-n-GaP0.4As0.6 nanostructures with different thicknesses of oxide layer (10-100Å) in the visible and ultraviolet regions of the spectrum. As a result, photodetectors of UV radiation based on Au-oxide-n-GaAs0.6P0.4 nanostructures with an optimal thickness of the oxide layer (δ=30-60 Å) were developed. The creation of highly effective photodetectors of solar ultraviolet radiation (λ=280-400 nm, hυ=3,1-4,43 eV) for ecological purposes has been reported.