Investigation of coherent Fourier scatterometry as a calibration tool for determination of steep side wall angle and height of a nanostructure

Abstract

Abstract Nanostructures with steep side wall angles ( swa ) play a pivotal role in various technological applications. Accurate characterization of these nanostructures is crucial for optimizing their performance. In this study, we propose a far-field detection method based on coherent Fourier scatterometry (CFS) for accurate quantification of steep swa and heights in cliff-like nanostructures. Our approach introduces a parameter termed ‘visibility’, derived from the unique far-field signatures of cliff-like nanostructures. This parameter serves as a quantitative metric for the calibration of swa and heights. The heightened sensitivity of our method is demonstrated, particularly when the incident polarization is perpendicular to the invariant direction of the nanostructure for swa calibration, while both polarization states exhibit sensitivity to height calibration. Furthermore, a comprehensive sensitivity analysis reveals the stable nature of our method, showcasing that even with fluctuations of ±10 nm in the position of the nanostructure, the resulting swa remains stable within a range of ± 0.5 ∘ . The exponential variation of the visibility parameter with edge roundness is observed, with fluctuations in edge roundness within 10 nm resulting in swa variations within 1.7∘ for both polarization states. In experimental validations, our results demonstrate reasonable agreement between CFS-derived and AFM measurements. The AFM data for swa ( 77.99 ∘ ± 1.37 ∘ ) and height (148.35 nm ±2.11 nm) are corroborated with CFS-derived value of swa ( 77.75 ∘ ± 3.61 ∘ , 78.36 ∘ ± 3.89 ∘ ) and height (149.42 nm ±1.66 nm, 150.05 nm ±1.04 nm) obtained from calibration curves for TM and TE incident beams, respectively. Overall, our findings underscore CFS as a potential and reliable tool for nanostructure characterization, offering precise measurements that are pivotal for advancing nanotechnology.