The Effect of Field-Dependent Mobilities on the Diffusion Theory of Rectification
Author:
Publisher
IOP Publishing
Subject
Industrial and Manufacturing Engineering,Metals and Alloys,Strategy and Management,Mechanical Engineering
Link
http://stacks.iop.org/0370-1301/68/i=6/a=306/pdf
Reference4 articles.
1. The Influence of Mobility Variation in High Fields on the Diffusion Theory of Rectifler Barriers
2. The theory of direct-current characteristics of rectifiers
3. Contributions to the theory of heterogeneous barrier layer rectifiers
4. Cuprous Oxide Rectifier Characteristics
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1. High-field, nonlinear electron transport in lightly doped Schottky-barrier diodes;Solid-State Electronics;1988-06
2. The effects of carrier degeneracy on transport properties of the double heterostructure injection laser;Applied Physics;1976-02
3. Chapter 2 The Voltage–Current Characteristic of Metal–Semiconductor Contacts;Semiconductors and Semimetals;1971
4. Diffusion of Hot and Cold Electrons in Semiconductor Barriers;Physical Review;1962-06-15
5. Accurate solution of an idealized one-carrier metal-semiconductor junction problem;Solid-State Electronics;1962-01
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