Lifetimes of Excess Carriers in InSb
Author:
Publisher
IOP Publishing
Subject
Industrial and Manufacturing Engineering,Metals and Alloys,Strategy and Management,Mechanical Engineering
Link
http://stacks.iop.org/0370-1301/70/i=12/a=109/pdf
Reference4 articles.
1. The quantum efficiency of the photo-electric effect in germanium for the 0.3–2 μ wavelength region
2. The Lifetime of Added Carriers in InSb
3. Theory of the Spectral Distribution of Recombination Radiation from InSb
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