Current Multiplication Processes in n-Type Germanium Point-Contact Transistors
Author:
Publisher
IOP Publishing
Subject
Industrial and Manufacturing Engineering,Metals and Alloys,Strategy and Management,Mechanical Engineering
Link
http://stacks.iop.org/0370-1301/67/i=8/a=305/pdf
Reference15 articles.
1. Surface States and Rectification at a Metal Semi-Conductor Contact
2. Theory of Relation between Hole Concentration and Characteristics of Germanium Point Contacts
3. Physical Principles Involved in Transistor Action
4. The Reduction of Rectifier Noise by Illumination
5. The Theory of Rectification and Injection at a Metal-Semiconductor Contact
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Junction Devices and Subsequent Developments;Transistors;1969
2. Current Gain in Formed Point Contact n-type Germanium Transistors;Proceedings of the Physical Society. Section B;1956-07-01
3. Review of Germanium Surface Phenomena;Journal of Applied Physics;1956-02
4. Dielektrischer Durchschlag;Dielectrics / Dielektrika;1956
5. Measurement of Minority Carrier Lifetimes in Semiconductors;Proceedings of the Physical Society. Section B;1955-08-01
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