On the Measurement of Minority Carrier Lifetimes in Silicon
Author:
Publisher
IOP Publishing
Subject
Industrial and Manufacturing Engineering,Metals and Alloys,Strategy and Management,Mechanical Engineering
Link
http://stacks.iop.org/0370-1301/69/i=8/a=302/pdf
Reference7 articles.
1. On the Measurement of Minority Carrier Lifetime in n-Type Silicon
2. Measurement of Hole Diffusion inn-Type Germanium
3. Trapping of Minority Carriers in Silicon. I.P-Type Silicon
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A simple theory of the laser-induced damage in semiconductors;Applied Physics;1977-01
2. On the role of carrier lifetime and surface recombination in the laser-induced damage of semiconductors;Journal of Physics D: Applied Physics;1975-09-11
3. Experimental Methods for Determining Diffusion Coefficients in Semiconductors;Atomic Diffusion in Semiconductors;1973
4. A novel method for the direct determination of the small signal bulk minority carrier lifetime in the middle region of a semiconductor sandwich†;International Journal of Electronics;1968-04
5. 7. Electrical Properties;Methods in Experimental Physics;1959
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