Behavior of exciton in direct−indirect band gap Al x Ga1−x As crystal lattice quantum wells

Abstract

Abstract Excitons have significant impacts on the properties of semiconductors. They exhibit significantly different properties when a direct semiconductor turns in to an indirect one by doping. Huybrecht variational method is also found to influence the study of exciton ground state energy and ground state binding energy in Al x Ga1−x As semiconductor spherical quantum dots. The Al x Ga1−x As is considered to be a direct semiconductor at Al concentration below 0.45, and an indirect one at the concentration above 0.45. With regards to the former, the ground state binding energy increases and decreases with Al concentration and eigenfrequency, respectively; however, while the ground state energy increases with Al concentration, it is marginally influenced by eigenfrequency. On the other hand, considering the latter, while the ground state binding energy increases with Al concentration, it decreases with eigenfrequency; nevertheless, the ground state energy increases both with Al concentration and eigenfrequency. Hence, for the better practical performance of the semiconductors, the properties of the excitons are suggested to vary by adjusting Al concentration and eigenfrequency