A 0.18 μm CMOS low noise amplifier using a current reuse technique for 3.1–10.6 GHz UWB receivers
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. Ultrawideband Radio Design: The Promise of High-Speed, Short-Range Wireless Connectivity
2. 0.18 [micro sign]m 3.1–10.6 GHz CMOS UWB LNA with 11.4±0.4 dB gain and 100.7±17.4 ps group-delay
3. A fully integrated 0.5-5.5 GHz CMOS distributed amplifier
4. A low-voltage and variable-gain distributed amplifier for 3.1-10.6 GHz UWB systems
5. Microwave CMOS Traveling Wave Amplifiers: Performance and Temperature Effects
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1. A common-gate cascaded with cascoded self-bias common source approach for 3.1–10.6 GHz UWB low noise amplifier;International Journal of Information Technology;2022-05-28
2. A 0.3–5 GHz, low‐power, area‐efficient, high dynamic range variable gain low ‐ noise amplifier based on tunable active floating inductor technique;International Journal of Circuit Theory and Applications;2021-06-02
3. Wideband Inductorless True Time Delay Cell Based on CMOS Inverter for Timed Array Receivers;Circuits, Systems, and Signal Processing;2021-03-04
4. A 0.3–1.4 GHz inductorless CMOS variable gain LNA based on the inverter cell and self-forward-body-bias technique;AEU - International Journal of Electronics and Communications;2020-01
5. Survey on parameter optimization of mobile communication band low noise amplifier design;International Journal of RF and Microwave Computer-Aided Engineering;2019-03-14
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