Optical and electrical properties of N-doped ZnO and fabrication of thin-film transistors-Reference-Cited by-同舟云学术

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Optical and electrical properties of N-doped ZnO and fabrication of thin-film transistors

Published:2009-03 Issue:3 Volume:30 Page:033001
ISSN:1674-4926
Container-title:Journal of Semiconductors
language:
Short-container-title:J. Semicond.

Author:

Xiaming Zhu,Huizhen Wu,Shuangjiang Wang,Yingying Zhang,Chunfeng Cai,Jianxiao Si,Zijian Yuan,Xiaoyang Du,Shurong Dong

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. ZnO-based transparent thin-film transistors

2. Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering

3. Fully Transparent ZnO Thin-Film Transistor Produced at Room Temperature

4. High-performance ZnO thin-film transistors fabricated at low temperature on glass substrates

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1. Effect of precursors on structural, optical and surface properties of ZnO thin film prepared by spray pyrolysis method: efficient removal of Cu (II) from wastewater;Transition Metal Chemistry;2023-10-26

2. Advances in mobility enhancement of ITZO thin-film transistors: a review;Journal of Semiconductors;2023-09-01

3. The Effect of Mg Content on the Physical Properties of ZnO Films Deposited by Ultrasonic Spray Pyrolysis;Sakarya University Journal of Science;2023-06-30

4. Effect of different pH values on growth solutions for the ZnO nanostructures;Chinese Journal of Physics;2021-06

5. Effect of B or N doping on the dielectric and electrical properties of ZnO at room temperature;Materials Research Express;2019-03-13

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