Analysis and performance exploration of high performance (HfO2) SOI FinFETs over the conventional (Si3N4) SOI FinFET towards analog/RF design
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/1674-4926/39/i=12/a=124002/pdf
Reference32 articles.
1. Cramming More Components Onto Integrated Circuits
2. Short-channel effects in SOI MOSFETs
3. Cross-Sectional Channel Shape Dependence of Short-Channel Effects in Fin-Type Double-Gate Metal Oxide Semiconductor Field-Effect Transistors
4. Multiple-gate SOI MOSFETs
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Improvement of digital, analog/RF and linearity performances of charge plasma based junctionless FinFET through spacer layer engineering;Micro and Nanostructures;2024-11
2. Revolutionizing Semiconductor Technology: A Comprehensive Review of FinFET;2024 International Conference on Communication, Computer Sciences and Engineering (IC3SE);2024-05-09
3. Enhanced analog/RF performance of hybrid charge plasma based junctionless C-FinFET amplifiers at 10 nm technology node;Microelectronics Journal;2023-01
4. Extended Gate to source overlap Heterojunction Vertical TFET: Design, analysis, and optimization with process parameter variations;Materials Science in Semiconductor Processing;2022-07
5. Investigation of Step Fin (SF), Step Drain (SD) and Step Source (SS) FinFETs with Trap Effect;IETE Journal of Research;2022-05-08
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3