Advances in new generation diluted magnetic semiconductors with independent spin and charge doping

Abstract

Abstract As one branch of spintronics, diluted magnetic semiconductors (DMSs) are extensively investigated due to their fundamental significance and potential application in modern information society. The classical materials (Ga,Mn)As of III–V group based DMSs has been well studied for its high compatibility with the high-mobility semiconductor GaAs. But the Curie temperature in (Ga,Mn)As film is still far below room temperature because the spin & charge doping is bundled to the same element that makes the fabrication very difficult. Alternatively, the discovery of a new generation DMSs with independent spin and charge doping, such as (Ba,K)(Zn,Mn) 2As2 (briefly named BZA), attracted considerable attention due to their unique advantages in physical properties and heterojunction fabrication. In this review we focus on this series of new DMSs including (I) materials in terms of three types of new DMSs, i.e. the " 111”, " 122” and " 1111” system; (II) the physical properties of BZA; (III) single crystals & prototype device based on BZA. The prospective of new type of DMSs with independent spin and charge doping is briefly discussed.