A 1.2-V CMOS front-end for LTE direct conversion SAW-less receiver-Reference-Cited by-同舟云学术

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A 1.2-V CMOS front-end for LTE direct conversion SAW-less receiver

Published:2012-03 Issue:3 Volume:33 Page:035005
ISSN:1674-4926
Container-title:Journal of Semiconductors
language:
Short-container-title:J. Semicond.

Author:

Wang Riyan,Huang Jiwei,Li Zhengping,Zhang Weifeng,Zeng Longyue

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. A 0.13 $\mu$ m CMOS Quad-Band GSM/GPRS/EDGE RF Transceiver Using a Low-Noise Fractional-N Frequency Synthesizer and Direct-Conversion Architecture

2. A Highly Linear SAW-Less CMOS Receiver Using a Mixer With Embedded Tx Filtering for CDMA

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A high linearity current mode second IF CMOS mixer for a DRM/DAB receiver;Journal of Semiconductors;2015-05

2. A wideband current-commutating passive mixer for multi-standard receivers in a 0.18 μm CMOS;Journal of Semiconductors;2013-01

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