Fabrication of SiC nanowire thin-film transistors using dielectrophoresis-Reference-Cited by-同舟云学术

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Fabrication of SiC nanowire thin-film transistors using dielectrophoresis

Published:2012-11 Issue:11 Volume:33 Page:114001
ISSN:1674-4926
Container-title:Journal of Semiconductors
language:
Short-container-title:J. Semicond.

Author:

Dai Zhenqing,Zhang Liying,Chen Changxin,Qian Bingjian,Xu Dong,Chen Haiyan,Wei Liangming,Zhang Yafei

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference50 articles.

1. Carbon-based electronics

2. One-Dimensional Nanostructures: Synthesis, Characterization, and Applications

3. Fabrication and photoelectrical characteristics of ZnO nanowire field-effect transistors

4. Growth of SiO2nanowires on different substrates using Au as a catalyst

5. Silicon Carbide as a Platform for Power Electronics

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Solution Processed Schottky Diodes Enabled by Silicon Carbide Nanowires for Harsh Environment Applications;Nano Letters;2023-04-03

2. Progress in SiC nanowire field-effect-transistors for integrated circuits and sensing applications;Microelectronic Engineering;2022-02

3. Study of Ac Dielectrophoretic Process of SiC Nanowires: A Universal Method for Alignment of Semiconductor Nanowires;Journal of Nanoscience and Nanotechnology;2016-04-01

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