Exploration of high-speed 3.0 THz imaging with a 65 nm CMOS process
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Published:2023-10-01
Issue:10
Volume:44
Page:102401
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ISSN:1674-4926
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Container-title:Journal of Semiconductors
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language:
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Short-container-title:J. Semicond.
Author:
Liu Min,Cai Ziteng,Liu Jian,Wu Nanjian,Liu Liyuan
Abstract
Abstract
This paper describes a promising route for the exploration and development of 3.0 THz sensing and imaging with FET-based power detectors in a standard 65 nm CMOS process. Based on the plasma-wave theory proposed by Dyakonov and Shur, we designed high-responsivity and low-noise multiple detectors for monitoring a pulse-mode 3.0 THz quantum cascade laser (QCL). Furthermore, we present a fully integrated high-speed 32 × 32-pixel 3.0 THz CMOS image sensor (CIS). The full CIS measures 2.81 × 5.39 mm2 and achieves a 423 V/W responsivity (Rv) and a 5.3 nW integral noise equivalent power (NEP) at room temperature. In experiments, we demonstrate a testing speed reaching 319 fps under continuous-wave (CW) illumination of a 3.0 THz QCL. The results indicate that our terahertz CIS has excellent potential in cost-effective and commercial THz imaging and material detection.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
1 articles.
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1. A 3 THz CMOS Image Sensor;IEEE Journal of Solid-State Circuits;2024-09