Investigation of the on-state behaviors of the variation of lateral width LDMOS device by simulation
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/1674-4926/39/i=11/a=114007/pdf
Reference31 articles.
1. High-Performance p-Channel LDMOS Transistors and Wide-Range Voltage Platform Technology Using Novel p-Channel Structure
2. A novel double RESURF LDMOS for HVIC's
3. Analytical models for the electric field distributions and breakdown voltage of Triple RESURF SOI LDMOS
4. Variation of Lateral Width Technique in SoI High-Voltage Lateral Double-Diffused Metal–Oxide–Semiconductor Transistors Using High-k Dielectric
5. Analysis and Fabrication of an LDMOS With High-Permittivity Dielectric
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