First-principles calculations of Mg2X (X = Si, Ge, Sn) semiconductors with the calcium fluorite structure
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/1674-4926/36/i=5/a=053002/pdf
Reference46 articles.
1. Semiconducting Properties ofMg2Si Single Crystals
2. Semiconducting Properties ofMg2Ge Single Crystals
3. Conduction in amorphousMg2Xcompounds (X=Geand Sn)
4. Highly effectiveMg2Si1−xSnxthermoelectrics
5. Pressure Coefficient of the Band Gap in Mg2Si, Mg2Ge, and Mg2Sn
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1. Two-dimensional Mg2Si-111: A direct bandgap semiconductor with excellent optical response properties predicted by first-principles calculations;Physics Letters A;2023-07
2. The effect of heavy and light electronic bands on thermoelectric properties of Mg2Si1-xSnx alloys: Insights from an ab-initio study;Chemical Physics;2023-01
3. Electronic Structure and Thermoelectric Properties of Mg2Sn Films Fabricated by Using Co-Sputtering Process With Stoichiometric Modification;IEEE Access;2022
4. First-Principle Simulation of Ferromagnetism in Gd-Doped Mg2X (X=Si, Ge and Sn);SPIN;2019-09
5. Electronic structure and thermoelectric properties of (Mg2X)2 / (Mg2Y)2 (X, Y = Si, Ge, Sn) superlattices from first-principle calculations;The European Physical Journal B;2016-05
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