A new integrated SOI power device based on self-isolation technology-Reference-Cited by-同舟云学术

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A new integrated SOI power device based on self-isolation technology

Published:2010-08 Issue:8 Volume:31 Page:084012
ISSN:1674-4926
Container-title:Journal of Semiconductors
language:
Short-container-title:J. Semicond.

Author:

Huanmei Gao,Xiaorong Luo,Wei Zhang,Hao Deng,Tianfei Lei

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. SOI power devices

2. Silicon on insulator technologies and devices: from present to future

3. An intelligent power IC with double buried-oxide layers formed by SIMOX technology

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analytical model for high-voltage SOI device with composite-kdielectric buried layer;Journal of Semiconductors;2013-09

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