Simulations of backgate sandwich nanowire MOSFETs with improved device performance-Reference-Cited by-同舟云学术

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Simulations of backgate sandwich nanowire MOSFETs with improved device performance

Published:2014-10 Issue:10 Volume:35 Page:104005
ISSN:1674-4926
Container-title:Journal of Semiconductors
language:
Short-container-title:J. Semicond.

Author:

Zhao Hengliang,Zhu Huilong,Zhong Jian,Ma Xiaolong,Wei Xing,Zhao Chao,Chen Dapeng,Ye Tianchun

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/1674-4926/35/i=10/a=104005/pdf

Reference14 articles.

1. Scalability of Extremely Thin SOI (ETSOI) MOSFETs to Sub-20-nm Gate Length

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analytical modeling and numerical simulation of novel double-gate InGaAs vertical nanowire transistor device for threshold voltage tuning and improved performance;Engineering Science and Technology, an International Journal;2016-12

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