On correction of model of stabilization of distribution of concentration of radiation defects in a multilayer structure with account experiment data
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/1674-4926/39/i=5/a=053001/pdf
Reference11 articles.
1. Dopant Implantation into the Silicon Substrate with Non-Planar Surface
2. Fabrication of submicrocrystalline structure in solid solutions by radiation-induced phase transition
3. Methods of functional-logic simulation of radiation-induced failures of electronic systems based on the fuzzy state machine model
4. Émmanuil Il’ich Adirovich (On the 30th anniversary of his death)
5. A high-temperature radiation-resistant rectifier based on p+-n junctions in 4H-SiC ion-implanted with aluminum
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