A novel NLDMOS with a high ballast resistance for ESD protection
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/1674-4926/35/i=2/a=024005/pdf
Reference9 articles.
1. A Review on the ESD Robustness of Drain-Extended MOS Devices
2. ESD
3. High-Voltage CMOS ESD and the Safe Operating Area
4. Investigation on Robustness of CMOS Devices Against Cable Discharge Event (CDE) Under Different Layout Parameters in a Deep-Submicrometer CMOS Technology
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