Effects of incident energy and angle on carbon cluster ions implantation on silicon substrate: a molecular dynamics study-Reference-Cited by-同舟云学术

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Effects of incident energy and angle on carbon cluster ions implantation on silicon substrate: a molecular dynamics study

Published:2017-09 Issue:9 Volume:38 Page:092002
ISSN:1674-4926
Container-title:Journal of Semiconductors
language:
Short-container-title:J. Semicond.

Author:

Wei Ye,Sang Shengbo,Zhou Bing,Deng Xiao,Chai Jing,Ji Jianlong,Ge Yang,Huo Yuanliang,Zhang Wendong

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/1674-4926/38/i=9/a=092002/pdf

Reference30 articles.

1. 60 keV Ar+-ion induced pattern formation on Si surface: Roles of sputter erosion and atomic redistribution

2. Self-organized surface ripple pattern formation by ion implantation

3. Effect of ion energy on microstructure and adhesion of diamond-like carbon on Ti6Al4V by ion beam deposition

4. Magnetic-field enhanced plasma immersion ion implantation and deposition (PIII&D) of diamond-like carbon films inside tubes

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