Design of high reliability RF-LDMOS by suppressing the parasitic bipolar effect using enhanced p-well and double epitaxy-Reference-Cited by-同舟云学术

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Design of high reliability RF-LDMOS by suppressing the parasitic bipolar effect using enhanced p-well and double epitaxy

Published:2015-06 Issue:6 Volume:36 Page:064013
ISSN:1674-4926
Container-title:Journal of Semiconductors
language:
Short-container-title:J. Semicond.

Author:

Xu Xiangming,Huang Jingfeng,Yu Han,Qian Wensheng,Zhou Zhengliang,Han Bo,Wang Yong,Wang Pengfei,David Wei Zhang

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/1674-4926/36/i=6/a=064013/pdf

Reference19 articles.

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Drain Extended MOS Body Region Engineering for Switching Reliability Under Unclamped Inductive Load Conditions;IEEE Transactions on Device and Materials Reliability;2023-03

2. Optimization of RF performance and reliability of 28V RF-LDMOS;2019 China Semiconductor Technology International Conference (CSTIC);2019-03

3. A high-conductivity insulated gate bipolar transistor with Schottky hole barrier contact;Journal of Semiconductors;2016-02

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