Reliability evaluation of high-performance, low-power FinFET standard cells based on mixed RBB/FBB technique-Reference-Cited by-同舟云学术

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Reliability evaluation of high-performance, low-power FinFET standard cells based on mixed RBB/FBB technique

Published:2017-04 Issue:4 Volume:38 Page:044005
ISSN:1674-4926
Container-title:Journal of Semiconductors
language:
Short-container-title:J. Semicond.

Author:

Wang Tian,Cui Xiaoxin,Ni Yewen,Liao Kai,Liao Nan,Yu Dunshan,Cui Xiaole

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/1674-4926/38/i=4/a=044005/pdf

Reference23 articles.

1. FinFET-a self-aligned double-gate MOSFET scalable to 20 nm

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1. Linear regression combined KNN algorithm to identify latent defects for imbalance data of ICs;Microelectronics Journal;2023-01

2. Retraction:Reliability assurance in early-life-failure test through improved nearest neighbor regression;IEICE Electronics Express;2020

3. Investigation on Effect of Temperature on Dual Gate Material Gate/Drain Underlap Germanium FinFET;Journal of Nanoelectronics and Optoelectronics;2018-07-01

4. Computational Study of Ternary Devices: Stable, Low-Cost, and Efficient Planar Perovskite Solar Cells;Nano-Micro Letters;2018-05-17

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