Author:
Liu Yongbo,Zhu Huilong,Zhang Yongkui,Wang Xiaolei,Huang Weixing,Li Chen,Ai Xuezheng,Wang Qi
Abstract
Abstract
A new type of vertical nanowire (VNW)/nanosheet (VNS) FETs combining a horizontal channel (HC) with bulk/back-gate electrode configuration, including Bulk-HC and FD-SOI-HC VNWFET, is proposed and investigated by TCAD simulation. Comparisons were carried out between conventional VNWFET and the proposed devices. FD-SOI-HC VNWFET exhibits better I
on/I
off ratio and DIBL than Bulk-HC VNWFET. The impact of channel doping and geometric parameters on the electrical characteristic and body factor (γ) of the devices was investigated. Moreover, threshold voltage modulation by bulk/back-gate bias was implemented and a large γ is achieved for wide range V
th modulation. In addition, results of I
on enhancement and I
off reduction indicate the proposed devices are promising candidates for performance and power optimization of NW/NS circuits by adopting dynamic threshold voltage management. The results of preliminary experimental data are discussed as well.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
2 articles.
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