Scaling relation of domain competition on (2+1)-dimensional ballistic deposition model with surface diffusion-Reference-Cited by-同舟云学术

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Scaling relation of domain competition on (2+1)-dimensional ballistic deposition model with surface diffusion

Published:2016-09 Issue:9 Volume:37 Page:092001
ISSN:1674-4926
Container-title:Journal of Semiconductors
language:
Short-container-title:J. Semicond.

Author:

Osada Kenyu,Katsuno Hiroyasu,Irisawa Toshiharu,Saito Yukio

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/1674-4926/37/i=9/a=092001/pdf

Reference21 articles.

1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

2. GaN Growth Using GaN Buffer Layer

3. Dislocation density reduction via lateral epitaxy in selectively grown GaN structures

4. Nanoheteroepitaxial growth of GaN on Si nanopillar arrays

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of film growth kinetics on grain coarsening and grain shape;Physical Review E;2017-04-24

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