Residual stress of (Pb0.92La0.08)(Zr0.52Ti0.48)O3films grown by a sol–gel process-Reference-Cited by-同舟云学术

Residual stress of (Pb0.92La0.08)(Zr0.52Ti0.48)O3films grown by a sol–gel process

Published:2013-04-10 Issue:5 Volume:22 Page:055019
ISSN:0964-1726
Container-title:Smart Materials and Structures
language:
Short-container-title:Smart Mater. Struct.

Author:

Ma Beihai,Liu Shanshan,Tong Sheng,Narayanan Manoj,Koritala Rachel E,Hu Zhongqiang,Balachandran Uthamalingam

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics,Civil and Structural Engineering,Signal Processing

Link

http://stacks.iop.org/0964-1726/22/i=5/a=055019/pdf

Reference34 articles.

1. Hot-Pressed (Pb,La)(Zr,Ti)O3Ferroelectric Ceramics for Electrooptic Applications

2. Electro-Optic Properties of Lanthanum-Modified Lead Zirconate Titanate Thin Films Epitaxially Grown by the Advanced Sol–Gel Method

3. Fatigue mechanisms in thin film PZT memory materials

4. Dielectric properties of (100) textured thick Pb(ZrxTi1−x)O3 films with different Zr/Ti atom ratios

5. Processing Effects in the Sol-Gel Preparation of PZT Dried Gels, Powders, and Ferroelectric Thin Layers

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5. Effects of annealing temperature and pressure of vacuum infiltration on the electrical properties of Pb(Zr0.52Ti0.48)O3 thick films prepared via a modified sol–gel method;Thin Solid Films;2020-07