A Physical Basis for the Extrapolation of Silicon Photodiode Quantum Efficiency into the Ultraviolet-Reference-Cited by-同舟云学术

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A Physical Basis for the Extrapolation of Silicon Photodiode Quantum Efficiency into the Ultraviolet

Published:1993-01-01 Issue:4 Volume:30 Page:345-350
ISSN:0026-1394
Container-title:Metrologia
language:
Short-container-title:Metrologia

Author:

Durant N M,Fox N P

Publisher

IOP Publishing

Subject

General Engineering

Link

http://stacks.iop.org/0026-1394/30/i=4/a=023/pdf

Reference15 articles.

1. Trap Detectors and their Properties

2. Numerical modeling of silicon photodiodes for high-accuracy applications, Part I. simulation programs

3. High accuracy modeling of photodiode quantum efficiency

4. New calculations of the quantum yield of silicon in the near ultraviolet

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1. Quantum yield in induced-junction silicon photodiodes at wavelengths around 400 nm;Metrologia;2024-04-03

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3. Reproduction and Dissemination of the Units of Radiation Flux and Irradiance Using Standard Ultraviolet Radiation Detectors;Measurement Techniques;2005-03

4. 3. Realization of spectral responsivity scales;Experimental Methods in the Physical Sciences;2005

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