Nanostructure formation by O2+ion sputtering of Si/SiGe heterostructures-Reference-Cited by-同舟云学术

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Nanostructure formation by O2+ion sputtering of Si/SiGe heterostructures

Published:2003-09-24 Issue:11 Volume:14 Page:1187-1191
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Lau G S,Tok E S,Liu R,Wee A T S,Tjiu W C,Zhang J

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/14/i=11/a=005/pdf

Reference14 articles.

1. Low-dimensional quantum devices

2. Lithographic positioning of self-assembled Ge islands on Si(001)

3. Spontaneous ordering of nanostructures on crystal surfaces

4. Self-organization of nanostructures in semiconductor heteroepitaxy

5. Si/Ge nanostructures

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. SiGe nanostructures;Surface Science Reports;2009-02-28

2. Self-Organized Surface Nanopatterning by Ion Beam Sputtering;Toward Functional Nanomaterials;2009

3. Ion beam induced crystal-edge nanoclusters at the origin of poly(ethylene glycol) film stabilization;Applied Surface Science;2006-11

4. Impact of 100MeV Au on the surface of relaxed Si0.5Ge0.5 alloy films studied by atomic force microscopy;Surface Science;2006-08

5. Copper nanopattern on SiO[sub 2] from sputter etching a Cu∕SiO[sub 2] interface;Applied Physics Letters;2005

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