A novel route for the inclusion of metal dopants in silicon-Reference-Cited by-同舟云学术

A novel route for the inclusion of metal dopants in silicon

Published:2009-12-03 Issue:2 Volume:21 Page:025304
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Gardener Jules A,Liaw Irving,Aeppli Gabriel,Boyd Ian W,Chater Richard J,Jones Tim S,McPhail David S,Sankar Gopinathan,Stoneham A Marshall,Sikora Marcin,Thornton Geoff,Heutz Sandrine

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/21/i=2/a=025304/pdf

Reference32 articles.

1. Electronic properties of selenium‐doped silicon

2. Room temperature ferromagnetic properties of (Ga, Mn)N

3. (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs

4. Controlled shallow single-ion implantation in silicon using an active substrate for sub-20‐keV ions

5. Effects of nitrogen vacancies induced by Mn doping in (Ga,Mn)N films grown by MOCVD

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